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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -18* i d @ v gs = -12v, t c = 100c continuous drain current -16 i dm pulsed drain current ? -72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 120 mj i ar avalanche current ? -18 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? -3.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s ) weight 4.3 ( typical ) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHY597034CM power mosfet thru-hole (to-257aa) 07/21/03 www.irf.com 1 60v, p-channel technology product summary part number radiation level r ds(on) i d IRHY597034CM 100k rads (si) 0.07 ? -18a* irhy593034cm 300k rads (si) 0.07 ? -18a* features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight for footnotes refer to the last page t0-257aa * current is limited by package pd - 94663
IRHY597034CM pre-irrad iation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.063 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.07 ? v gs = -12v, i d = -16a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 10 ? ? s ( )v ds = -25v, i ds = -16a ? i dss zero gate voltage drain current ? ? -10 v ds = -48v ,v gs =0v ? ? -25 v ds = -48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 45 v gs =-12v, i d = -18a q gs gate-to-source charge ? ? 18 nc v ds = -30v q gd gate-to-drain (?miller?) charge ? ? 13 t d (on) turn-on delay time ? ? 20 v dd = -30v, i d = -18a, t r rise time ? ? 120 v gs =-12v, r g = 7.5 ?, t d (off) turn-off delay time ? ? 45 t f fall time ? ? 25 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 1490 ? v gs = 0v, v ds = -25v c oss output capacitance ? 575 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 70 ? na ? ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 typical socket mount c/w note: corresponding spice and saber models are available on international rectifier web site. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -18* i sm pulse source current (body diode) ? ? ? -72 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -18a, v gs = 0v ? t rr reverse recovery time ? ? 100 ns t j = 25c, i f =-18a, di/dt -100a/ s q rr reverse recovery charge ? ? 200 nc v dd -25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) * current is limited by package r g internal gate resistance ? 5.5 ? ? f = 1.73mhz, open drain
www.irf.com 3 pre-irradia tion IRHY597034CM table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -60 ? -60 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds =-48v, v gs =0v r ds(on) static drain-to-source ? ? 0.06 ? 0.06 ? v gs = -12v, i d =-16a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.07 ? 0.07 ? v gs = -12v, i d =-16a on-state resistance (to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHY597034CM 2. part number irhy593034cm v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -18a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. single event effect, safe operating area for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.9 252.6 33.1 - 60 - 60 - 60 - 60 - 60 i 59.7 314 30.5 - 60 - 60 - 60 - 45 - 25 au 82.3 350 28.4 - 60 - 60 - 60 ? ? -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 vgs vds br i au
IRHY597034CM pre-irrad iation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15

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-i d , drain-to-source current ( ) "#$ + "$%& + "#$%& -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -18a
www.irf.com 5 pre-irradia tion IRHY597034CM fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss

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-i sd , reverse drain current ( ) * " + "$%& + "#$%& 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -18a v = -30v ds v = -48v ds
IRHY597034CM pre-irrad iation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) -i , drain current (a) c d limited by package
www.irf.com 7 pre-irradia tion IRHY597034CM fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge -12 v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + - 25 50 75 100 125 150 0 50 100 150 200 250 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -8.0a -11.4a -18a
IRHY597034CM pre-irrad iation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = -25v, starting t j = 25c, l= 0.74mh peak i l = -18a, v gs = -12v ? i sd -18a, di/dt - 250a/ s, v dd - 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/03 case outline and dimensions ? to-257aa not es : 1. dime ns ioning & t olerancing per ans i y14.5m-1994. 2. cont rol l ing dimens ion: inch. 3. dime ns ions ar e s hown i n mi l l ime t e r s [ inch e s ]. 4. out line conf orms t o jedec out line t o-257aa. 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 3 2 1 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140]

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